Extrinsic and Intrinsic Performance of Vertical InAs Nanowire MOSFETs on Si Substrates

This paper presents dc and RF characterization as well as modeling of vertical InAs nanowire (NW) MOSFETs with L_G=200 nm and Al₂O₃/HfO₂ high-κ dielectric. Measurements at V_DS=0.5 V show that high transconductance (g_m=1.37 mS/μm), high drive current (I_DS=1.34 mA/μm), and low ON-resistance (R_ON=287 Ωμm) can be realized using vertical InAs NWs on Si substrates. By measuring the 1/f-noise, the gate area normalized gate voltage noise spectral density, S_VG·L_G·W_G, is determined to be lowered by one order of magnitude compared with similar devices with a high-κ film consisting of HfO₂ only. In addition, with a virtual source model we are able to determine the intrinsic transport properties. These devices (L_G=200 nm) show a high injection velocity (v_inj=1.7×10⁷ cm/s) with a performance degradation for array FETs predominantly due to an increase in series resistance.