Low Power Operation of a Vertical Cavity Transistor Laser via the Reduction of Collector Offset Voltage

Author

Mong-Kai Wu ; Liu, Michael ; Bambery, Rohan ; Feng, Milton ; Holonyak, Nick

Author_Institution

Dept. of Electr. & Comput. Eng., Univ. of Illinois at Urbana-Champaign, Urbana, IL, USA

Volume

26

Issue

10

fYear

2014

fDate

15-May-14

Firstpage

1003

Lastpage

1006

Abstract

Data are presented on low-power operation in a vertical cavity transistor laser via reduced collector offset voltage by placing the emitter contact on the top of four pairs of the GaAs/AlGaAs DBR to reduce emitter resistance and subsequently depositing 11 SiO₂/TiO₂ DBR pairs to improve cavity quality. Consequently, the device demonstrates a reduced collector offset voltage of 1.65 V and a low-power dissipation of 6.32 mW under laser operation.

Keywords

III-V semiconductors; aluminium compounds; distributed Bragg reflector lasers; gallium arsenide; laser cavity resonators; semiconductor lasers; DBR; GaAs-AlGaAs; SiO₂-TiO₂; collector offset voltage reduction; emitter contact; emitter resistance; low-power operation; power 6.32 mW; vertical cavity transistor laser; voltage 1.65 V; Cavity resonators; Distributed Bragg reflectors; Resistance; Stimulated emission; Transistors; Vertical cavity surface emitting lasers; Vertical cavity transistor laser; dielectric mirror; optical switch;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/LPT.2014.2312360

Filename

6777534