Anomalous Hot-Carrier-Induced Linear Drain Current Degradation of LDMOS Under Pulse Gate Stress With Different Amplitudes

In this letter, the hot-carrier-induced linear drain current degradations of the n-type lateral double-diffused MOS (LDMOS) transistor under the pulse gate stress with different amplitudes and the worst dc gate stress are experimentally compared. They show that the degradation under the 1.5 V pulse gate stress is less than that under the worst dc gate stress (1.5 V). However, under the 5 V pulse gate stress, the degradation is about two times larger than that under the worst dc gate stress because of the enhanced impact ionization at the pulse falling edge. In this way, the large gate pulse amplitude stress is used for evaluating the hot-carrier-induced lifetime of the LDMOS working with the large gate pulse.