Millimeter-Wave Broadband Transition of Substrate Integrated Waveguide on High-to-Low Dielectric Constant Substrates

For emerging millimeter-wave wireless applications at W- and E-bands, active components including LNA and power amplifier are preferably fabricated or surface-mounted on the materials of a high dielectric constant (such as CMOS and MHMIC). On the other hand, antennas or radiating elements should be developed on relatively low-dielectric constant substrates for the enhancement of gain and bandwidth. Therefore, the development of a wideband transition from high-to-low dielectric constant substrates becomes necessary because the use of wire bonding schemes brings up packaging, interconnects, and manufacturing problems at millimeter-wave frequencies. This paper presents a novel integrated wideband transition of substrate integrated waveguide (SIW) on high-to-low dielectric constant substrates. The transition is made of a single-layer structure, which consists of a tapered high-dielectric constant substrate that connects two SIWs. Because of the waveguide-based structure of the transition, it has a self-shielded configuration, and its interference is minimum. Simulated and measured results show that the bandwidth of the proposed transition covers almost the entire W- and E-bands with low insertion loss.