DocumentCode
48967
Title
Field Effect Mobility Model in Oxide Semiconductor Thin Film Transistors With Arbitrary Energy Distribution of Traps
Author
Ling Li ; Nianduan Lu ; Ming Liu
Author_Institution
Lab. of Nanofabrication & Novel Devices Integrated Technol., Inst. of Microelectron., Beijing, China
Volume
35
Issue
2
fYear
2014
fDate
Feb. 2014
Firstpage
226
Lastpage
228
Abstract
The field effect mobility in an oxide thin film transistor (TFT) is studied theoretically. Based on a multiple-trapping and release model, a unified expression for field effect mobility is formulated for oxide TFTs. This model can well explain the temperature and gate voltage dependent mobility observed in oxide TFT. The effect of localized states distribution on the field effect mobility is also demonstrated.
Keywords
localised states; semiconductor device models; semiconductor materials; thin film transistors; TFT; arbitrary energy distribution; field effect mobility; gate voltage; localized states distribution; multiple trapping; oxide semiconductor; release model; thin film transistor; Conductivity; Logic gates; Semiconductor device modeling; Temperature; Temperature dependence; Thin film transistors; Oxide thin film transistor; field effect mobility; multiple-trapping and release theory;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/LED.2013.2291782
Filename
6702474
Link To Document