DocumentCode :
49224
Title :
Amorphous Titanium Oxide Semiconductors on Quasi-Crystal-Like InGaZnO Channels for Thin Film Transistor Applications
Author :
Hsiao-Hsuan Hsu ; Ping Chiou ; Chun-Hu Cheng ; Shiang-Shiou Yen ; Chien-Hung Tung ; Chun-Yen Chang ; Yu-Chien Lai ; Hung-Wei Li ; Chih-Pang Chang ; Hsueh-Hsing Lu ; Ching-Sang Chuang ; Yu-Hsin Lin
Author_Institution :
Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
Volume :
11
Issue :
6
fYear :
2015
fDate :
Jun-15
Firstpage :
506
Lastpage :
511
Abstract :
This paper reports an InGaZnO thin-film transistor with titanium-oxide semiconductor as channel capping layer. Based on the experimental results, the titanium-oxide semiconductor has the function of not only a surface passivation layer to reduce the defect states localized at grain boundaries near source/drain contacts, but also a mobility booster to enhance electric field across channel. Compared to control IGZO TFT, the crystalline IGZO TFTs with titanium-oxide semiconductor exhibits an improved performance of a low drive voltage of , a low threshold voltage of 1.9 V, a low sub-threshold swing of 244 mV/decade , and a high mobility of 13.7 cm 2/V·s. The simple titanium-oxide capping process have been demonstrated in this work, which provides considerable potential for further display applications requiring a low power operation and a low-temperature fabrication.
Keywords :
display instrumentation; electrical contacts; gallium compounds; indium compounds; passivation; thin film transistors; titanium compounds; InGaZnO-TiO; amorphous titanium oxide semiconductor; channel capping layer; display application; grain boundary; quasicrystal-like channel; source-drain contact; surface passivation layer; thin film transistor application; titanium-oxide capping process; voltage 1.9 V; Aluminum oxide; Dielectrics; Films; Iron; Logic gates; Substrates; Thin film transistors; Crystalline phase; indium-gallium-zinc oxide (IGZO); thin-film transistor (TFT); titanium oxide;
fLanguage :
English
Journal_Title :
Display Technology, Journal of
Publisher :
ieee
ISSN :
1551-319X
Type :
jour
DOI :
10.1109/JDT.2014.2353091
Filename :
6887354
Link To Document :
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