Title :
Performance breakthrough in NOR flash memory with dopant-segregated Schottky-barrier (DSSB) SONOS devices
Author :
Choi, Sung-Jin ; Han, Jin-Woo ; Kim, Sungho ; Moon, Dong-Il ; Jang, Moon-Gyu ; Su Kim, Jin ; Hee Kim, Kwang ; Sung Lee, Gi ; Sub Oh, Jae ; Ho Song, Myong ; Yun Chang Park ; Woo Kim, Jeoung ; Choi, Yang-Kyu
Author_Institution :
EECS, KAIST, Daejeon, South Korea
Abstract :
A novel dopant segregated Schottky barrier (DSSB) SONOS device as a form of double-gate (DG) is demonstrated for NOR flash memory applications. The DSSB also applies to all-around-gate (AAG) SONOS devices. The source side injection caused by sharp energy band bending in the DSSB device results in a high-speed programming (Vth shift of 4.2V @ 320 ns) at a low program bias (Vgs/Vds=7V/3V). Moreover, faster program speed in a narrower fin width (Wfin) due to its low parasitic resistance and enhanced gate controllability is achieved. Drain disturbance-free characteristics in a programmed cell are confirmed as well.
Keywords :
NOR circuits; Schottky barriers; doping; flash memories; logic gates; NOR flash memory; all-around-gate SONOS devices; dopant-segregated Schottky-barrier SONOS devices; double-gate; drain disturbance-free characteristics; gate controllability; programmed cell; sharp energy band bending; source side injection; time 320 ns; voltage 4.2 V; Channel hot electron injection; Controllability; Decision support systems; Flash memory; Flash memory cells; Nanoscale devices; P-n junctions; SONOS devices; Schottky barriers; Voltage;
Conference_Titel :
VLSI Technology, 2009 Symposium on
Conference_Location :
Honolulu, HI
Print_ISBN :
978-1-4244-3308-7
