Highly scalable Z-RAM with remarkably long data retention for DRAM application

The operating characteristics and retention times of floating body cells and arrays using Z-RAM^reg technology fabricated on a 50 nm DRAM process are presented. For the first time, data retention time longer than 8 s at 93degC and 1.6 V wide programming window are obtained on floating body cells as small as 54 nm times 54 nm. These results demonstrate the suitability of floating body memories for DRAM applications. These improvements were obtained through optimization of DRAM technology such as junction engineering, thermal treatments, and improved passivation processes.