• DocumentCode
    497207
  • Title

    High hole mobility in multiple silicon nanowire gate-all-around pMOSFETs on (110) SOI

  • Author

    Chen, Jiezhi ; Saraya, Takuya ; Hiramoto, Toshiro

  • Author_Institution
    Inst. of Ind. Sci., Univ. of Tokyo, Tokyo, Japan
  • fYear
    2009
  • fDate
    16-18 June 2009
  • Firstpage
    90
  • Lastpage
    91
  • Abstract
    Systematic study on hole mobility in gate-all-around (GAA) multiple Si nanowire (NW) pFETs on (110) SOI is presented for the first time. [110]-NWs show high mobility, 2.4times enhancement over universal (100) mobility, even in high Ninv region and in narrow (25 nm) NWs. Furthermore, effects of uniaxial tensile stress are also investigated, indicating that [110] direction uniaxial stress is effective to modulate hole mobility in NWs.
  • Keywords
    MOSFET; elemental semiconductors; hole mobility; nanowires; semiconductor quantum wires; silicon; silicon-on-insulator; stress effects; (110) SOI; Si; [110] direction uniaxial stress; hole mobility; multiple silicon nanowire gate-all-around pMOSFETs; size 25 nm; uniaxial tensile stress effects; Degradation; Electron mobility; Electronic mail; Light scattering; MOSFETs; Nanoscale devices; Silicon; Temperature dependence; Tensile stress; Very large scale integration;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    VLSI Technology, 2009 Symposium on
  • Conference_Location
    Honolulu, HI
  • Print_ISBN
    978-1-4244-3308-7
  • Type

    conf

  • Filename
    5200644
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=497207