Selective phase modulation of NiSi using N-ion implantation for high performance dopant-segregated source/drain n-channel MOSFETs

Author

Loh, W.-Y. ; Hung, P.Y. ; Coss, B.E. ; Kalra, P. ; Ok, Injo ; Smith, Greg ; Kang, C.-Y. ; Lee, S.-H. ; Oh, J. ; Sassman, B. ; Majhi, P. ; Kirsch, P. ; Tseng, H-H ; Jammy, R.

Author_Institution

SEMATECH, Austin, TX, USA

fYear

2009

fDate

16-18 June 2009

Firstpage

100

Lastpage

101

Abstract

We have developed a novel dual phase-modulated Ni silicide for Schottky barrier and series resistance reduction in dopant-segregated source/drain (DSS) n-MOSFETs. Using pre-silicide N₂ ⁺ implant (thereafter N-implant), it is possible to selectively form interfacial epitaxial Si-rich NiSi₂, reducing electron Schottky barrier(SB) from 0.7 eV to 0.34 eV while maintaining a low resistive bulk NiSi, at the same silicide formation temperature. Dual phase-modulated NiSi shows enhanced thermal stability up to 750degC, low rhos of 26 muOmegacm and SB modulation Deltaphi_Bn = 0.36 eV (expected 81% reduction in contact resistance R_c). Saturation g_m for phase-modulated N-modulated DSS n-FETs shows 32% improvement over control NiSi with 22% reduction in series resistance R_ext, while still maintaining CMOS integratability.

Keywords

MOSFET; Schottky barriers; nickel compounds; phase modulation; thermal stability; CMOS integratability; NiSi; Schottky barrier; dopant-segregated source-drain n-channel MOSFET; electron volt energy 0.34 eV; interfacial epitaxial; n-FET; n-ion implantation; selective phase modulation; series resistance reduction; thermal stability; Decision support systems; Electrons; Implants; MOSFET circuits; Phase modulation; Schottky barriers; Silicides; Temperature; Thermal resistance; Thermal stability;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology, 2009 Symposium on

Conference_Location

Honolulu, HI

Print_ISBN

978-1-4244-3308-7

Type

conf

Filename

5200648