Single silicide comprising Nickel-Dysprosium alloy for integration in p- and n-FinFETs with independent control of contact resistance by Aluminum implant

We report the first demonstration of a single silicide contact technology employing a low workfunction metal alloy [nickel (Ni) - dysprosium (Dy)] silicide, while achieving low contact resistance R_C, for both n- and p- FETs. A key enabler is the aluminum ion implant technology for independent and effective reduction of R_C for the strained p-FinFETs with SiGe S/D. For strained p-FinFETs, the Ni(Dy)SiGe contact with Al implant gives ~20% I_DSAT enhancement over the conventional NiSiGe contact without Al implant. For strained n-FinFETs, Ni(Dy)Si:C S/D contact, simultaneously formed using the same process conditions, gives an I_DSAT enhancement of ~49% over n-FinFETs with NiSi:C contacts.