Impact of uniaxial strain on channel backscattering characteristics and drain current variation for nanoscale PMOSFETs

Using an improved temperature-dependent method, this paper clarifies that channel backscattering of nanoscale PMOSFETs can be reduced by the uniaxially compressive strain. For the first time, the electrostatic potential of the source-channel junction barrier has been experimentally characterized with strain and gate voltage dependence. We further demonstrate that the strain technology can improve the drain current variation as well as the mismatching properties through the enhanced ballistic efficiency. Moreover, the improvement shows gate length and drain voltage dependence.