Fabrication and Characterization of Micro Opto-electronic Sensor

Tunneling junction is the basic structure of photoconductive semiconductor switch (PCSS) and single electric transistor (SET). In order to get ultra high speed PCSS, photo lithography and AFM nano oxidation methods are combined to fabricate micro metal (Ti)-insulator (TiOx)-metal (Ti) tunneling junction (MIM) type PCSS. Multi-junctions structure is tried to enhance the PCSSpsilas photoelectric efficiency. The I-V characteristics, such as effect of TiOx wire width on tunneling and effect of TiOx wirepsilas number on Tunneling of the tunneling junctions, are studied and analyzed in this paper. The results indicate that there is a clear exponential relationship between tunneling current and bias voltage and that different TiOx wire width and different numbers of TiOx wires induce different tunneling phenomena.