DocumentCode
497940
Title
A 5ns fast write multi-level non-volatile 1 K bits RRAM memory with advance write scheme
Author
Sheu, Shyh-Shyuan ; Chiang, Pei-Chia ; Lin, Wen-Pin ; Lee, Heng-Yuan ; Chen, Pang-Shiu ; Chen, Yu-Sheng ; Wu, Tai-Yuan ; Chen, Frederick T. ; Su, Keng-Li ; Kao, Ming-Jer ; Cheng, Kuo-Hsing ; Tsai, Ming-Jinn
Author_Institution
Electronics and Optoelectronics Research Laboratories (EOL), ITRI, Taiwan
fYear
2009
fDate
16-18 June 2009
Firstpage
82
Lastpage
83
Abstract
A 1-Kb HfO2 based RRAM for high speed nonvolatile memory application is proposed. With this chip, a high speed write characteristic in the RRAM cell can be achieved. The present circuit design includes a 1T1R RRAM (1 transistor/1 resistive memory) cell and a voltage write circuit, which limit the current through the memory cell. The random write time at VDD = 3.3V is as fast as 5 ns in the RRAM, which were fabricated with a 0.18 µm TSMC process.
Keywords
Circuits; Electrodes; Hafnium oxide; Materials science and technology; Nonvolatile memory; Power supplies; Pulse amplifiers; Switches; Testing; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
VLSI Circuits, 2009 Symposium on
Conference_Location
Kyoto, Japan
Print_ISBN
978-1-4244-3307-0
Electronic_ISBN
978-4-86348-001-8
Type
conf
Filename
5205283
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