• DocumentCode
    49880
  • Title

    DC and RF characteristics of In0.52Al0.48As/In0.7Ga0.3As HEMTs at 300 and 16 K

  • Author

    Endoh, Akira ; Watanabe, Issei ; Mimura, Takashi ; Matsui, Takashi

  • Author_Institution
    Nat. Inst. of Inf. & Commun. Technol., Koganei, Japan
  • Volume
    49
  • Issue
    3
  • fYear
    2013
  • fDate
    Jan. 31 2013
  • Firstpage
    217
  • Lastpage
    219
  • Abstract
    Pseudomorphic In0.52Al0.48As/In0.7Ga0.3As HEMTs have been fabricated in the gate length Lg range of 50 to 700 nm and their DC and RF characteristics measured at 300 and 16 K. The maximum drain-source current Ids, the maximum transconductance gm_max and the cutoff frequency fT values increased at 16 K as expected. The ratios gm_max(16 K)/gm_max(300 K) and fT(16 K)/fT(300 K) decreased with decreasing Lg, which results from the enhancement of the ballistic transport of electrons.
  • Keywords
    III-V semiconductors; aluminium compounds; gallium arsenide; high electron mobility transistors; indium compounds; DC characteristics; In0.52Al0.48As-In0.7Ga0.3As; RF characteristics; ballistic electron transport; cutoff frequency; maximum drain-source current; pseudomorphic HEMT; size 50 nm to 700 nm; temperature 16 K; temperature 300 K;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el.2012.4180
  • Filename
    6457581
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=49880