DocumentCode
49890
Title
High-voltage superjunction VDMOS with low reverse recovery loss
Author
Zhu, Junan ; Yang, Zengli ; Sun, W.F. ; Qian, Q.S. ; Xu, Songcen ; Yi, Y.B.
Author_Institution
Nat. ASIC Syst. Eng. Res. Center, Southeast Univ., Nanjing, China
Volume
49
Issue
3
fYear
2013
fDate
Jan. 31 2013
Firstpage
219
Lastpage
220
Abstract
A new design of the high-voltage superjunction VDMOS (SJ-VDMOS) structure is proposed to minimise the reverse recovery losses of the body diode and the noise during the switching process. The key feature of the structure is that a discontinuous P+ region in the source is implemented which can decrease the carrier injection efficiency. Numerical results indicate that the reverse recovery charge and the overshoot voltage of the proposed structure is decreased by 76.5% and 52.5%, respectively, compared to the conventional SJ-VDMOS structure, while maintaining the same breakdown voltage.
Keywords
MIS structures; MOSFET; semiconductor device noise; semiconductor diodes; SJ-VDMOS structure; body diode; breakdown voltage; carrier injection efficiency; discontinuous P+ region; high-voltage superjunction VDMOS; low reverse recovery loss; overshoot voltage; reverse recovery charge; switching process;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el.2012.3541
Filename
6457582
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