• DocumentCode
    49909
  • Title

    Stress-induced leakage current in CNT-MOSFETs using simplified quantitative model

  • Author

    Ossaimee, M.I.

  • Author_Institution
    Dept. of Eng. Phys. & Math., Ain Shams Univ., Cairo, Egypt
  • Volume
    49
  • Issue
    3
  • fYear
    2013
  • fDate
    Jan. 31 2013
  • Firstpage
    222
  • Lastpage
    223
  • Abstract
    The stress-induced leakage current (SILC) in carbon nanotube (CNT)-MOSFETs based on a previously developed model for the steady-state component of SILC across the ultra-thin gate oxide of a MOS capacitor is calculated. It was found that the contribution of the component due to SILC in the gate current of MOSFETs must not be neglected. It was also found that SILC is larger in the source side than in the drain side.
  • Keywords
    MOS capacitors; MOSFET; carbon nanotubes; CNT MOSFET; MOS capacitor; carbon nanotube MOSFET; gate current; simplified quantitative model; stress induced leakage current; ultra thin gate oxide;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el.2012.3847
  • Filename
    6457584
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=49909