• DocumentCode
    499232
  • Title

    Scaling of average power of coherent terahertz pulses by stacking GaAs wafers

  • Author

    Jiang, Yi ; Ding, Yujie J. ; Zotova, Ioulia B.

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Lehigh Univ., Bethlehem, PA, USA
  • fYear
    2009
  • fDate
    2-4 June 2009
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    The average terahertz output power generated from stacked GaAs wafers using two CO2 lasers is scaled up by 160. The highest average output power is measured to be 29.8 muW by stacking ten wafers.
  • Keywords
    III-V semiconductors; gallium arsenide; gas lasers; optical pulse generation; GaAs; average power saling; coherent terahertz pulses; wafer stacking; wafers; Crystals; Gallium arsenide; Gas lasers; Gases; Laser beams; Nonlinear optics; Optical pulse generation; Power generation; Power lasers; Stacking; (190.4360) Nonlinear optics, devices; (190.4410) Nonlinear optics, parametric processes; (190.4975) Parametric processes;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics, 2009 and 2009 Conference on Quantum electronics and Laser Science Conference. CLEO/QELS 2009. Conference on
  • Conference_Location
    Baltimore, MD
  • Print_ISBN
    978-1-55752-869-8
  • Electronic_ISBN
    978-1-55752-869-8
  • Type

    conf

  • Filename
    5224311
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=499232