DocumentCode
499643
Title
Design of active photonic devices for enhanced emission from Si nanocrystals
Author
Redding, B. ; Shi, S. ; Creazzo, T. ; Marchena, E. ; Prather, D.
Author_Institution
Dept. of Electr. & Comput. Eng., Univ. of Delaware, Newark, DE, USA
fYear
2009
fDate
2-4 June 2009
Firstpage
1
Lastpage
2
Abstract
Si-nc light emission, overcoming limitations of c-Si, is described by a rate equation formalism within the ADE-FDTD scheme. Following this scheme, we design a series of resonant devices which tune and enhance the Si-nc luminescence.
Keywords
elemental semiconductors; finite difference time-domain analysis; luminescence; nanostructured materials; silicon; Si; active photonic devices design; light emission; nanocrystals; rate equation formalism; Distributed Bragg reflectors; Equations; Luminescence; Microcavities; Nanocrystals; Optical devices; Optical materials; Resonance; Spontaneous emission; Stimulated emission; (230.5590) Quantum-well, -wire and -dot devices; (230.5750) Resonators;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics, 2009 and 2009 Conference on Quantum electronics and Laser Science Conference. CLEO/QELS 2009. Conference on
Conference_Location
Baltimore, MD
Print_ISBN
978-1-55752-869-8
Electronic_ISBN
978-1-55752-869-8
Type
conf
Filename
5224873
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