DocumentCode
499892
Title
Random population of InAs/GaAs quantum dots
Author
Driscoll, I.O. ; Hutchings, M. ; Smowton, P.M. ; Blood, P.
Author_Institution
Sch. of Phys. & Astron., Cardiff Univ., Cardiff, UK
fYear
2009
fDate
2-4 June 2009
Firstpage
1
Lastpage
2
Abstract
We experimentally observe truly random to non-thermal to thermal distribution of population of InAs quantum dots with temperature using unamplified spontaneous emission and measure the impact on laser operation.
Keywords
III-V semiconductors; gallium arsenide; indium compounds; laser beams; quantum dot lasers; semiconductor quantum dots; spontaneous emission; InAs-GaAs; laser operation; nonthermal to thermal distribution; random population; semiconductor quantum dots; unamplified spontaneous emission; Absorption; Gallium arsenide; Laser modes; Laser theory; Quantum dot lasers; Quantum dots; Semiconductor lasers; Spontaneous emission; Stationary state; Temperature distribution; (250.5590) Quantum-well, -wire and -dot devices; (250.5960) Semiconductor lasers;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics, 2009 and 2009 Conference on Quantum electronics and Laser Science Conference. CLEO/QELS 2009. Conference on
Conference_Location
Baltimore, MD
Print_ISBN
978-1-55752-869-8
Electronic_ISBN
978-1-55752-869-8
Type
conf
Filename
5225261
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