Title :
Spontaneous Raman scattering in suspended InGaAsP waveguides
Author :
Holmstrom, Scott A. ; Stievater, T.H. ; Pruessner, M.W. ; Rabinovich, W.S. ; Kanakaraju, S. ; Calhoun, L.C. ; Khurgin, J.B. ; Kelly, D.P. ; Ghodssi, R.
Author_Institution :
Univ. of Tulsa, Tulsa, OK, USA
Abstract :
We demonstrate the spontaneous Raman effect in suspended InGaAsP waveguides and report that the zinc blende Raman selection rules are relaxed in the waveguide geometry. The suspended semiconductor waveguide is an exciting platform for a range of linear and nonlinear optical experiments due to its enhanced light-guiding capability.
Keywords :
III-V semiconductors; Raman spectra; arsenic compounds; gallium arsenide; indium compounds; nonlinear optics; optical materials; optical waveguides; InGaAsP; linear optical experiment; nonlinear optical experiment; spontaneous Raman effect; spontaneous Raman scattering; suspended waveguides; zinc blende Raman selection rules; Crystalline materials; Frequency; Geometrical optics; Light scattering; Optical fiber polarization; Optical filters; Optical scattering; Optical waveguides; Raman scattering; Semiconductor waveguides; (160.6000) Semiconductors; (230.3990) Microstructure devices; (300.6450) Spectroscopy, Raman;
Conference_Titel :
Lasers and Electro-Optics, 2009 and 2009 Conference on Quantum electronics and Laser Science Conference. CLEO/QELS 2009. Conference on
Conference_Location :
Baltimore, MD
Print_ISBN :
978-1-55752-869-8
Electronic_ISBN :
978-1-55752-869-8
