DocumentCode
500197
Title
Photoluminescence enhancement by metal nanoparticles
Author
Sun, G. ; Khurgin, J.B.
Author_Institution
Dept. of Phys., Univ. of Massachusetts Boston, Boston, MA, USA
fYear
2009
fDate
2-4 June 2009
Firstpage
1
Lastpage
2
Abstract
We have developed a simple yet rigorous theory of the enhancement of photoluminescence (PL) efficiency in the vicinity of metal nanoparticles that takes into account the enhancement during optical absorption and emission. Using an example of active InGaN quantum dots (QDs) positioned in close proximity to Ag nanospheres embedded in GaN, we show that strong enhancement can be obtained only for those QDs, atoms, or molecules that are originally inefficient in absorbing as well as in emitting optical energy.
Keywords
III-V semiconductors; gallium compounds; indium compounds; nanoparticles; photoluminescence; semiconductor quantum dots; InGaN; nanospheres; optical energy; photoluminescence; quantum dots; Absorption; Atom optics; Frequency measurement; Gallium nitride; Nanoparticles; Optical sensors; Photoluminescence; Plasmons; Quantum dots; Stimulated emission; (230.0040) Detectors; (240.6680) Surface plasmons;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics, 2009 and 2009 Conference on Quantum electronics and Laser Science Conference. CLEO/QELS 2009. Conference on
Conference_Location
Baltimore, MD
Print_ISBN
978-1-55752-869-8
Electronic_ISBN
978-1-55752-869-8
Type
conf
Filename
5225579
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