Recombination dynamics of photogenerated carriers in 10.4 µm-cutoff photodiodes consisting of W-structured superlattices

Author

Guibao Xu ; Xiaodong Mu ; Ding, Yujie J.

Author_Institution

Dept. of Electr. & Comput. Eng., Lehigh Univ., Bethlehem, PA, USA

fYear

2009

fDate

2-4 June 2009

Firstpage

1

Lastpage

2

Abstract

We used pump-probe technique to investigate recombination dynamics of photogenerated carriers in photodiodes consisting of InAs/GaInSb W-structured superlattices. Recombination time constants of 1.6 ns and 10 ns were measured under high and low powers, respectively.

Keywords

III-V semiconductors; gallium compounds; high-speed optical techniques; indium compounds; integrated optics; photodiodes; photoluminescence; semiconductor superlattices; InAs-GaInSb; W-structured superlattices; photodiodes; photogenerated carriers; pump-probe technique; recombination dynamics; recombination time constants; time-resolved photoluminescence; wavelength 10.4 mum; Laser beams; Laser excitation; Photodiodes; Photoluminescence; Probes; Radiative recombination; Semiconductor superlattices; Temperature; Time measurement; Wavelength measurement; (160.6000) Semiconductor materials; (230.0250) Optoelectronics; (250.5230) Photoluminescence;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics, 2009 and 2009 Conference on Quantum electronics and Laser Science Conference. CLEO/QELS 2009. Conference on

Conference_Location

Baltimore, MD

Print_ISBN

978-1-55752-869-8

Electronic_ISBN

978-1-55752-869-8

Type

conf

Filename

5225588