Cold Silicon Preamorphization Implant and Presilicide Sulfur Implant for Advanced Nickel Silicide Contacts

Author

Yi Tong ; Qian Zhou ; Kain Lu Low ; Lan Xiang Wang ; Lye Hing Chua ; Thanigaivelan, T. ; Henry, Todd ; Yee-Chia Yeo

Author_Institution

Dept. of Electr. & Comput. Eng., Nat. Univ. of Singapore, Singapore, Singapore

Volume

61

Issue

10

fYear

2014

fDate

Oct. 2014

Firstpage

3499

Lastpage

3506

Abstract

We report the first demonstration of a nickel silicide (NiSi) contact formation technique using cold silicon (Si) preamorphization implant (PAI) combined with presilicide sulfur (S) implant. The cold Si PAI suppresses the agglomeration of NiSi film at elevated temperatures. Presilicide S implant and its segregation at the interface of NiSi and n-type Si (n-Si) after silicidation significantly lowers the effective Schottky barrier height (Φⁿ_B) for electrons at the NiSi/n-Si contact. The S atoms in Si could be modeled as donor-like traps near the NiSi/n-Si interface, and a simulation study was performed to explain the reduction of Φⁿ_B caused by S.

Keywords

Schottky barriers; amorphisation; electrical contacts; elemental semiconductors; ion implantation; nickel compounds; silicon; sulphur; NiSi; NiSi contact formation technique; NiSi film agglomeration; NiSi-n-Si interface; PAI; S; Si; cold silicon preamorphization implant; donor-like traps; effective Schottky barrier height; n-type Si; nickel silicide contact formation technique; presilicide sulfur implant; silicidation; Electron traps; Implants; Nickel alloys; Silicidation; Silicides; Silicon; Cold silicon implant; Schottky barrier height (SBH); nickel silicide (NiSi); sulfur (S) segregation;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2014.2347705

Filename

6888469