• DocumentCode
    50032
  • Title

    50+ years of intrinsic breakdown

  • Author

    Ying Sun ; Bealing, C. ; Boggs, Steven ; Ramprasad, Ramamurthy

  • Author_Institution
    Inst. of Mater. Sci., Univ. of Connecticut, Storrs, CT, USA
  • Volume
    29
  • Issue
    2
  • fYear
    2013
  • fDate
    March-April 2013
  • Firstpage
    8
  • Lastpage
    15
  • Abstract
    The basic quantum mechanical theory for intrinsic breakdown was developed by von Hippel and Fröhlich over 70 years ago, but only now can we exploit their ideas accurately through the use of computational quantum mechanics. As shown above, von Hippel´s low energy criterion for intrinsic breakdown provides remarkably good agreement with measured data for a range of both ionic and covalently bonded materials. We can correlate intrinsic breakdown with both bandgap and phonon cutoff frequency, although the relationships differ for different groups of materials. The challenge going forward is to move from intrinsic breakdown to engineering breakdown through inclusion of effects caused by morphology, chemical impurities (impurity states in the bandgap), and defects such as nanocavities. We believe that inclusion of these phenomena is possible using Monte Carlo computations with parameters computed using first principles methods, and we are pursuing this approach.
  • Keywords
    Monte Carlo methods; electric breakdown; energy gap; impurities; quantum theory; Hippel low energy criterion; Monte Carlo computations; bandgap; basic quantum mechanical theory; chemical impurities; computational quantum mechanics; covalent bonded materials; engineering breakdown; first principles methods; impurity states; intrinsic breakdown; ionic bonded materials; morphology; nanocavities; phonon cutoff frequency; Electric breakdown; Electric fields; Energy loss; History; Impact ionization; Phonons; Scattering; DFPT; DFT; computational quantum mechanisms; intrinsic breakdown;
  • fLanguage
    English
  • Journal_Title
    Electrical Insulation Magazine, IEEE
  • Publisher
    ieee
  • ISSN
    0883-7554
  • Type

    jour

  • DOI
    10.1109/MEI.2013.6457595
  • Filename
    6457595