InGaAs quantum well nanoneedles on silicon with long wavelength emission for silicon transparency

Author

Moewe, Michael ; Chuang, Linus C. ; Crankshaw, Shanna ; Ng, Billy ; Chang-Hasnain, Connie

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., Univ. of California at Berkeley, Berkeley, CA, USA

fYear

2009

fDate

2-4 June 2009

Firstpage

1

Lastpage

2

Abstract

We report novel single-crystalline wurtzite InGaAs/GaAs core-shell quantum well nanoneedles with photoluminescence below the 1.12 eV silicon bandgap, grown on GaAs or Si. This long wavelength enables integration with silicon waveguides and CMOS devices.

Keywords

III-V semiconductors; gallium arsenide; indium compounds; integrated optics; nanostructured materials; optical waveguides; photoluminescence; quantum well devices; silicon; CMOS device; InGaAs-GaAs; Si; long wavelength emission; photoluminescence; quantum well nanoneedle; silicon transparency; silicon waveguides; single crystalline wurtzite core shell nanoneedle; Gallium arsenide; III-V semiconductor materials; Indium gallium arsenide; Neural networks; Optical devices; Optical films; Optical waveguides; Photoluminescence; Quantum computing; Silicon; (160.4760) Optical properties; (160.6000) Semiconductor materials;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics, 2009 and 2009 Conference on Quantum electronics and Laser Science Conference. CLEO/QELS 2009. Conference on

Conference_Location

Baltimore, MD

Print_ISBN

978-1-55752-869-8

Electronic_ISBN

978-1-55752-869-8

Type

conf

Filename

5225717