Monolithic integration of germanium photodetectors and silicon wire waveguides with carrier injection structures

Author

Tsuchizawa, Tai ; Yamada, Koji ; Watanabe, Toshifumi ; Shinojima, Hiroyuki ; Nishi, Hidetaka ; Itabashi, Seiichi ; Park, Sungbong ; Ishikawa, Yasuhiko ; Wada, Kazumi

Author_Institution

NTT Microsyst. Integration Labs., NTT Corp., Atsugi, Japan

fYear

2009

fDate

2-4 June 2009

Firstpage

1

Lastpage

2

Abstract

We integrated monolithically vertical p-i-n Ge photodetectors with variable optical attenuators (VOAs) based on Si wire rib waveguides with a carrier injection structure. The fabricated Ge photodetectors have a low dark current of 60 nA and a high responsivity of 0.85 A/W at -1 V and accurately detect the change in light power due to the Si-VOA.

Keywords

dark conductivity; elemental semiconductors; germanium; integrated optics; integrated optoelectronics; monolithic integrated circuits; optical attenuators; optical waveguides; photodetectors; rib waveguides; silicon; Ge-Si; carrier injection structure; current 60 nA; dark current; monolithic integration; p-i-n photodetectors; responsivity; variable optical attenuators; voltage -1 V; wire rib waveguides; Dark current; Detectors; Germanium; Monolithic integrated circuits; Optical attenuators; Optical films; Optical waveguides; Photodetectors; Silicon; Wire; (040.5160) Photodetectors; (130.3990) Micro-optical devices; (230.3120) Integrated optics devices;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics, 2009 and 2009 Conference on Quantum electronics and Laser Science Conference. CLEO/QELS 2009. Conference on

Conference_Location

Baltimore, MD

Print_ISBN

978-1-55752-869-8

Electronic_ISBN

978-1-55752-869-8

Type

conf

Filename

5225777