DocumentCode
500396
Title
Ambipolar diffusion in silicon-on-insulator studied by optical pump-probe based on free carrier absorption
Author
Zhao, Hui
Author_Institution
Dept. of Phys. & Astron., Univ. of Kansas, Lawrence, KS, USA
fYear
2009
fDate
2-4 June 2009
Firstpage
1
Lastpage
2
Abstract
Ambipolar diffusion coefficient in silicon-on-insulator is measured as functions of lattice temperature and carrier density by directly imaging the carrier dynamics by using a high resolution optical pump-probe technique based on free carrier absorption.
Keywords
integrated optics; light absorption; light scattering; optical pumping; silicon-on-insulator; ambipolar diffusion coefficient; free carrier absorption; integrated optics; optical pump-probe; silicon-on-insulator; Absorption; Charge carrier density; Density measurement; High-resolution imaging; Image resolution; Lattices; Optical imaging; Optical pumping; Silicon on insulator technology; Temperature; (190.4390) Nonlinear optics, integrated optics; (320.7100) Ultrafast measurements;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics, 2009 and 2009 Conference on Quantum electronics and Laser Science Conference. CLEO/QELS 2009. Conference on
Conference_Location
Baltimore, MD
Print_ISBN
978-1-55752-869-8
Electronic_ISBN
978-1-55752-869-8
Type
conf
Filename
5225788
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