DocumentCode :
500397
Title :
Red and UV generation using frequency-converted GaInNAs-based semiconductor disk laser
Author :
Rautiainen, Jussi ; Härkönen, Antti ; Korpijärvi, Ville-Markus ; Puustinen, Janne ; Orsila, Lasse ; Guina, Mircea ; Okhotnikov, Oleg G.
Author_Institution :
Optoelectron. Res. Centre, Tampere Univ. of Technol., Tampere, Finland
fYear :
2009
fDate :
2-4 June 2009
Firstpage :
1
Lastpage :
2
Abstract :
We report on the intracavity frequency-doubling of a GaInNAs/GaAs disk laser. The laser operated at 1220 nm and delivered 4.6 W of power at ~610 nm. The red emission was further frequency-doubled to 305 nm.
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; laser beams; laser cavity resonators; nitrogen compounds; optical harmonic generation; semiconductor lasers; GaInNAs; GaInNAs-GaAs; UV generation; frequency-converted semiconductor disk laser; intracavity optical frequency-doubling; power 4.6 W; red generation; wavelength 1220 nm; wavelength 305 nm; Chemical lasers; Frequency; Gallium arsenide; Heat sinks; Mirrors; Power lasers; Quantum cascade lasers; Semiconductor lasers; Surface emitting lasers; Water heating; (140.3515) Lasers, frequency doubled; (140.3610) Lasers, ultraviolet; (140.5960) Semiconductor lasers;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics, 2009 and 2009 Conference on Quantum electronics and Laser Science Conference. CLEO/QELS 2009. Conference on
Conference_Location :
Baltimore, MD
Print_ISBN :
978-1-55752-869-8
Electronic_ISBN :
978-1-55752-869-8
Type :
conf
Filename :
5225789
Link To Document :
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