Origin of non radiative recombination in GaInNAsSb/GaNAs quantum well lasers

Author

Ferguson, J.W. ; Smowton, P.M. ; Blood, P. ; Bae, H. ; Sarmiento, T. ; Harris, J.S., Jr.

Author_Institution

Cardiff Sch. of Phys. & Astron., Cardiff Univ., Cardiff, UK

fYear

2009

fDate

2-4 June 2009

Firstpage

1

Lastpage

2

Abstract

We quantify contributions to threshold-current in state-of-the-art 1.55 mum GaInNAsSb lasers and the affect of layer design and nitrogen level. Non-radiative current is independent of nitrogen content (3.0-3.3%) but linked to the GaNAs barriers.

Keywords

III-V semiconductors; electron-hole recombination; gallium arsenide; gallium compounds; indium compounds; laser beams; optical losses; quantum well lasers; GaInNAsSb-GaNAs; current density; layer design; nitrogen content; nonradiative recombination; optical mode loss; quantum well laser; threshold current; wavelength 1.55 mum; Absorption; Current density; Laser theory; Molecular beam epitaxial growth; Nitrogen; Quantum well lasers; Radiative recombination; Semiconductor lasers; Spontaneous emission; Threshold current; 250.5590 (Quantum-well, -wire and -dot devices); 250.5960 (Semiconductor lasers);

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics, 2009 and 2009 Conference on Quantum electronics and Laser Science Conference. CLEO/QELS 2009. Conference on

Conference_Location

Baltimore, MD

Print_ISBN

978-1-55752-869-8

Electronic_ISBN

978-1-55752-869-8

Type

conf

Filename

5225811