Title :
Direct band gap tensile-strained Germanium
Author :
Huo, Yijie ; Lin, Hai ; Rong, Yiwen ; Makarova, Maria ; Kamins, Theodore I. ; Vuckovic, Jelena ; Harris, James S.
Author_Institution :
Solid State & Photonics Lab., Stanford Univ., Stanford, CA, USA
Abstract :
We report up to 2.3% biaxial tensile-strained Ge layers grown on InGaAs/GaAs buffer layers. Low-temperature photoluminescence shows a dramatic intensity increase for >2% tensile strained Ge, confirming the existence of a direct band gap Ge.
Keywords :
III-V semiconductors; Raman spectra; buffer layers; elemental semiconductors; gallium arsenide; germanium; indium compounds; molecular beam epitaxial growth; photoluminescence; semiconductor growth; Ge; InGaAs-GaAs; InGaAs/GaAs buffer layers; direct band gap; low-temperature photoluminescence; tensile-strained germanium; Germanium; Photonic band gap; (250.5230) Photoluminescence; (250.5590) Quantum-well, -wire and -dot devices;
Conference_Titel :
Lasers and Electro-Optics, 2009 and 2009 Conference on Quantum electronics and Laser Science Conference. CLEO/QELS 2009. Conference on
Conference_Location :
Baltimore, MD
Print_ISBN :
978-1-55752-869-8
Electronic_ISBN :
978-1-55752-869-8
