The effects of increasing AlN mole fraction on the performance of AlGaN based ultraviolet light emitting diode active regions

Author

Sampath, A.V. ; Garrett, G.A. ; Sarney, W.L. ; Shen, H. ; Wraback, M. ; Grandusky, James R. ; Schowalter, Leo J.

Author_Institution

US Army Res. Lab., Adelphi, MD, USA

fYear

2009

fDate

2-4 June 2009

Firstpage

1

Lastpage

2

Abstract

Time-resolved photoluminescence and transmission electron microscopy results suggest that the density of point defects may have a more significant role than threading dislocations in the performance of UVLED AlGaN active regions emitting at shorter wavelengths.

Keywords

III-V semiconductors; aluminium compounds; dislocations; gallium compounds; light emitting diodes; photoluminescence; point defects; transmission electron microscopy; ultraviolet sources; AlGaN; AlGaN based light emitting diode; AlN mole fraction; UVLED active regions; point defects; threading dislocations; time-resolved photoluminescence; transmission electron microscopy; ultraviolet light emitting diode; Aluminum gallium nitride; Electron emission; Light emitting diodes; Molecular beam epitaxial growth; Photoluminescence; Radiative recombination; Spectroscopy; Substrates; Transmission electron microscopy; Water storage; (130.5990) Semiconductors; (230.3670) Light-emitting diodes; (320.7150) Ultrafast Spectroscopy;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics, 2009 and 2009 Conference on Quantum electronics and Laser Science Conference. CLEO/QELS 2009. Conference on

Conference_Location

Baltimore, MD

Print_ISBN

978-1-55752-869-8

Electronic_ISBN

978-1-55752-869-8

Type

conf

Filename

5225989