Title :
Strong photoluminescence from InGaN/GaN nanorods arrays studies by time-resolved photoluminescence
Author :
Hong, Chi-Chang ; Hyeyoung Ann ; Wu, Chen-Ying ; Gwo, Shangjr
Author_Institution :
Dept. of Photonics & Inst. of Electro-Opt. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
Abstract :
We report more than one order of magnitude stronger green photoluminescence from InGaN/GaN nanorods arrays compare to that from InGaN epilayer and its emission mechanism studied by time-resolved and temperature-resolved photoluminescence measurement.
Keywords :
III-V semiconductors; gallium compounds; indium compounds; nanostructured materials; photoluminescence; semiconductor epitaxial layers; time resolved spectra; InGaN-GaN; nanorods arrays; photoluminescence; time-resolved photoluminescence; Carrier confinement; Gallium nitride; Optical arrays; Optical buffering; Photoluminescence; Photonic band gap; Plasma measurements; Stimulated emission; Temperature distribution; Temperature measurement; (250.5230) Photoluminescence; (300.6500) Spectroscopy, time-resolved;
Conference_Titel :
Lasers and Electro-Optics, 2009 and 2009 Conference on Quantum electronics and Laser Science Conference. CLEO/QELS 2009. Conference on
Conference_Location :
Baltimore, MD
Print_ISBN :
978-1-55752-869-8
Electronic_ISBN :
978-1-55752-869-8
