DocumentCode
500601
Title
Spin Hall Effect of Light in a semiconductor
Author
Menard, Jean-Michel ; Mattacchione, Adam ; Sipe, John E. ; Smirl, Arthur L. ; Van Driel, Henry M.
Author_Institution
Dept. of Phys., Univ. of Toronto, Toronto, ON, Canada
fYear
2009
fDate
2-4 June 2009
Firstpage
1
Lastpage
2
Abstract
We demonstrate the spatial separation of right and left circularly polarized components of a linear polarized beam non-normally incident at an air-GaAs interface through the transverse separation of optically injected up- and down-spin electrons.
Keywords
III-V semiconductors; gallium arsenide; light polarisation; semiconductor-insulator boundaries; spin Hall effect; GaAs; left circularly polarized components; linear polarized beam; optically injected down-spin electrons; optically injected up-spin electrons; right circularly polarized components; spin Hall effect; Electron optics; Gallium arsenide; Hall effect; Laser excitation; Optical devices; Optical polarization; Optical refraction; Optical variables control; Photonic band gap; Probes; (160.6000) Semiconductor materials; (260.5430) Polarization;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics, 2009 and 2009 Conference on Quantum electronics and Laser Science Conference. CLEO/QELS 2009. Conference on
Conference_Location
Baltimore, MD
Print_ISBN
978-1-55752-869-8
Electronic_ISBN
978-1-55752-869-8
Type
conf
Filename
5226014
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