DocumentCode
500623
Title
Spin-Polarized Electron Transport in GaAs: Role of Holes
Author
Ruzicka, Brian A. ; Werake, Lalani K. ; Zhao, Hui ; Mover, Matt ; Vignale, G.
Author_Institution
Dept. of Phys. & Astron., Univ. of Kansas, Lawrence, KS, USA
fYear
2009
fDate
2-4 June 2009
Firstpage
1
Lastpage
2
Abstract
Spin-polarized electron transport in GaAs is studied with emphasis on the role of holes. Sub-picosecond ac spin current pulses are produced and ambipolar spin diffusion are studied, both dominated by space charge field of holes.
Keywords
III-V semiconductors; electron spin polarisation; gallium arsenide; spin dynamics; GaAs; ambipolar spin diffusion; space charge; spin-polarized electron transport; sub-picosecond ac spin current pulses; Charge carrier processes; Electrons; Gallium arsenide; Laser excitation; Nonlinear optics; Optical harmonic generation; Optical pulses; Probes; Space vector pulse width modulation; Temperature; (190.7110) Ultrafast nonlinear optics; (320.7130) Ultrafast processes in condensed matter;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics, 2009 and 2009 Conference on Quantum electronics and Laser Science Conference. CLEO/QELS 2009. Conference on
Conference_Location
Baltimore, MD
Print_ISBN
978-1-55752-869-8
Electronic_ISBN
978-1-55752-869-8
Type
conf
Filename
5226037
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