DocumentCode
500641
Title
Stark effect induced by photogenerated carriers in multiple GaN/AlN asymmetric coupled quantum wells
Author
Sun, Guan ; Tripathy, Suvranta K. ; Ding, Yujie J. ; Liu, Guangyu ; Huang, G.S. ; Zhao, Hongping ; Tansu, Nelson ; Khurgin, Jacob B.
Author_Institution
Dept. of Electr. & Comput. Eng., Lehigh Univ., Bethlehem, PA, USA
fYear
2009
fDate
2-4 June 2009
Firstpage
1
Lastpage
2
Abstract
We have observed blue and red Stark shifts of two excitonic transition peaks in multiple GaN/AlN asymmetric coupled quantum wells due to increases in electric fields originating from spatial separation of photogenerated electrons and holes.
Keywords
III-V semiconductors; Stark effect; excitons; gallium compounds; indium compounds; semiconductor quantum wells; GaN-AlN; Stark effect; asymmetric coupled quantum wells; excitonic transition peaks; photogenerated carriers; Charge carrier processes; Electron optics; Electrooptic modulators; Gallium nitride; Laser excitation; Optical coupling; Optical pumping; Photoluminescence; Quantum computing; Stark effect; (250.5230) Photoluminescence; (250.5590) Quantum-well, -wire, and -dot devices;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics, 2009 and 2009 Conference on Quantum electronics and Laser Science Conference. CLEO/QELS 2009. Conference on
Conference_Location
Baltimore, MD
Print_ISBN
978-1-55752-869-8
Electronic_ISBN
978-1-55752-869-8
Type
conf
Filename
5226055
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