DocumentCode :
500689
Title :
Detection speeds for single-photon detectors based on photoconductive gain
Author :
Rowe, M.A. ; Salley, G.M. ; Gansen, E.J. ; Etzel, S.M. ; Nam, S.W. ; Mirin, R.P.
Author_Institution :
Nat. Inst. of Stand. & Technol., Boulder, CO, USA
fYear :
2009
fDate :
2-4 June 2009
Firstpage :
1
Lastpage :
2
Abstract :
We investigate the limits on detection speed for single-photon detectors based on photoconductive gain. We outline how to apply this approach to a quantum dot, optically gated, field-effect transistor photodetector.
Keywords :
field effect transistors; photodetectors; photons; quantum dots; detection speeds; field-effect transistor photodetector; optically gated; photoconductive gain; quantum dot; single-photon detectors; Event detection; FETs; Gas detectors; HEMTs; MODFETs; NIST; Optical noise; Photoconductivity; Photodetectors; Quantum dots; (040.3780) Low Light Level; (230.5160) Photodetectors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics, 2009 and 2009 Conference on Quantum electronics and Laser Science Conference. CLEO/QELS 2009. Conference on
Conference_Location :
Baltimore, MD
Print_ISBN :
978-1-55752-869-8
Electronic_ISBN :
978-1-55752-869-8
Type :
conf
Filename :
5226104
Link To Document :
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