DocumentCode
500699
Title
Mid-infrared GaInSb/AlGaInSb quantum well laser diodes
Author
Nash, G.R. ; Przeslak, S.J.B. ; Smith, S.J. ; de Valicourt, G. ; Andreev, A.D. ; Carrington, P.J. ; Yin, M. ; Krier, A. ; Coomber, S.D. ; Buckle, L. ; Emeny, M.T. ; Ashley, T.
Author_Institution
QinetiQ, Malvern, UK
fYear
2009
fDate
2-4 June 2009
Firstpage
1
Lastpage
2
Abstract
Electroluminescence from GaInSb/AlGaInSb quantum well (QW) diode lasers, grown on GaAs, has been investigated as a function of strain in the QWs, with lasing occurring at ~3.3 mum at 200 K with 1.1% strain in the QW.
Keywords
III-V semiconductors; aluminium compounds; electroluminescence; gallium compounds; indium compounds; quantum well lasers; GaInSb-AlGaInSb; electroluminescence; midinfrared quantum well laser diodes; strain function; temperature 200 K; Capacitive sensors; Diode lasers; Gallium arsenide; Gas lasers; Physics; Quantum cascade lasers; Quantum well lasers; Semiconductor lasers; Temperature; Threshold current; (140.3070) Infrared and far-infrared lasers; (250.5960) Semiconductor lasers;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics, 2009 and 2009 Conference on Quantum electronics and Laser Science Conference. CLEO/QELS 2009. Conference on
Conference_Location
Baltimore, MD
Print_ISBN
978-1-55752-869-8
Electronic_ISBN
978-1-55752-869-8
Type
conf
Filename
5226114
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