Numerical Simulation and Visualization of Thermal and Flow Fields of MOCVD

Method of computational fluid dynamics (CFD) was applied to numerical simulation of gases´ thermal and flow fields of metal organic chemical vapor deposition (MOCVD) reactor which grows high efficiency three junction GaInP/GaAs/Ge tandem solar cells. Virtual reality (VR) technology was applied to visualization of numerical simulation of gas´s thermal and flow fields of MOCVD reactor. The results of numerical simulation provide optimization of processing parameters in MOCVD reactor under a certain conditions, providing rational suggestion for optimization design in size of the substrate in the reactor. The results of visualization truly and intuitively display distributing situation of gas´s temperature field and velocity field in MOCVD reactor, providing further optimizations of processing parameters of GaInP thin film grown by MOCVD with theoretical basis.