The design of sub-threshold reference circuit using resistor temperature compensation

Author

Li, Luo ; Xiaowei, Cai ; Zheying, Li

Author_Institution

Sch. of Electron. & Eng., Beijing Jiao Tong Univ., Beijing, China

fYear

2009

fDate

2-5 Aug. 2009

Firstpage

78

Lastpage

81

Abstract

A reference circuit employing sub-threshold current is presented, which uses two CTAT currents and resistor temperature compensation to generate a reference voltage of 150 mV. Since most of MOSFETs are working at sub-threshold region, the circuit only consumes 976 nW at supply voltage of 1 V with PSRR of -51.68 dB at room temperature using TSMC 0.18 mum technology. The reference voltage´s average temperature coefficient is 26.67ppm/degC in the range [-25, +125]degC and its variation is 3.6 mV/V for supply voltage from 0.8 to 2.5 V.

Keywords

MOSFET; compensation; reference circuits; resistors; CTAT current; MOSFET; PSRR; TSMC; power 976 nW; reference voltage; resistor temperature compensation; size 0.18 mum; subthreshold reference circuit design; voltage 0.8 V to 2.5 V; voltage 1 V; voltage 150 mV; Circuits; Design engineering; Energy consumption; Intrusion detection; MOSFETs; Mirrors; Power engineering and energy; Resistors; Temperature distribution; Threshold voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Circuits and Systems, 2009. MWSCAS '09. 52nd IEEE International Midwest Symposium on

Conference_Location

Cancun

ISSN

1548-3746

Print_ISBN

978-1-4244-4479-3

Electronic_ISBN

1548-3746

Type

conf

DOI

10.1109/MWSCAS.2009.5236149

Filename

5236149