Title :
Diode network used as ESD protection in RF applications
Author :
Velghe, R.M.D.A. ; de Vreede, P.W.H. ; Woerlee, P.H.
Abstract :
RF circuits in CMOS ask for adequate ESD protections without deteriorating the RF performance. Standard ESD protections are hindered by parasitic capacitance, area requirements and quality factor. This paper presents N+/Pwell and P+/Nwell STI-bounded diodes with a satisfactory ESD performance, tunable with diode area, and an excellent RF performance.
Keywords :
CMOS integrated circuits; Q-factor; electrostatic discharge; microwave diodes; radiofrequency integrated circuits; CMOS RF circuit; ESD protection; STI-bounded diodes; diode network; parasitic capacitance; quality factor; Area measurement; Current measurement; Diodes; Electrostatic discharge; Leakage current; Protection; Pulse measurements; Radio frequency; Transmission line measurements; Voltage;
Conference_Titel :
Electrical Overstress/Electrostatic Discharge Symposium, 2001. EOS/ESD '01.
Conference_Location :
Portland, OR
Print_ISBN :
978-1-5853-7039-9
Electronic_ISBN :
978-1-5853-7039-9
