• DocumentCode
    501884
  • Title

    Voltage raised in Al2O3 gap of GMR head in the deshunting process

  • Author

    Siritaratiwat, A. ; Suwannata, N. ; Pinnoi, J. ; Pupaichitkul, C.

  • Author_Institution
    Dept. of Electr. Eng., Khon Kaen Univ., Khon Kaen, Thailand
  • fYear
    2001
  • fDate
    11-13 Sept. 2001
  • Firstpage
    298
  • Lastpage
    303
  • Abstract
    In the process of HGA fabrication, a shunting process is performed in order to prevent the ESD effect but when an HGA is required for another process the shunt tab has to be trimmed. This process is thought to cause the damage of GMR heads at the Al2O3 gap between the shunt tab and the substrate. The simulated and measured results are compared to investigate this possibility.
  • Keywords
    electrostatic discharge; giant magnetoresistance; Al2O3; ESD effect; GMR head; HGA fabrication; deshunting process; electrostatic discharge; giant magnetoresistance; Biological system modeling; Capacitance; Electrical resistance measurement; Electrostatic discharge; Fabrication; Humans; Immune system; Switches; Testing; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electrical Overstress/Electrostatic Discharge Symposium, 2001. EOS/ESD '01.
  • Conference_Location
    Portland, OR
  • Print_ISBN
    978-1-5853-7039-9
  • Electronic_ISBN
    978-1-5853-7039-9
  • Type

    conf

  • Filename
    5254955
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=501884