• DocumentCode
    50189
  • Title

    Effect of Process Deviations on Performance of Piezoresistive Pressure Sensors

  • Author

    Singh, Jaskirat ; Rajanna, K. ; Reddy, A. Mallikarjuna ; Singh, Karam

  • Author_Institution
    Semi-Conductor Lab., Ajitgarh, India
  • Volume
    27
  • Issue
    3
  • fYear
    2014
  • fDate
    Aug. 2014
  • Firstpage
    410
  • Lastpage
    416
  • Abstract
    Diaphragm thickness and the corresponding piezoresistor locations change due to over or under etching in bulk micromachined piezoresistive pressure sensor which intern influences the device performance. In the present work, variation of sensitivity and nonlinearity of a micro electro mechanical system low pressure sensor is investigated. The sensor is modeled using finite element method to analyze the variation of sensitivity and nonlinearity with diaphragm thickness. To verify the simulated results, the sensors with different diaphragm thicknesses are fabricated. The models are verified by comparing the calculated results with experimental data. This study is potentially useful for the researchers as most of the times the diaphragm is either over-etched or under-etched due to inherent variation in wafer thickness and involving manual operations.
  • Keywords
    diaphragms; etching; finite element analysis; micromachining; microsensors; piezoresistive devices; pressure sensors; resistors; bulk micromachined piezoresistive pressure sensor; diaphragm; finite element method; microelectromechanical system low pressure sensor; over-etching; piezoresistor; process deviation effect; under-etching; Etching; Piezoresistance; Resistors; Sensitivity; Sensors; Silicon; Stress; KOH etching; MEMS; microfabrication; pressure sensor;
  • fLanguage
    English
  • Journal_Title
    Semiconductor Manufacturing, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0894-6507
  • Type

    jour

  • DOI
    10.1109/TSM.2014.2329569
  • Filename
    6832638