DocumentCode
50189
Title
Effect of Process Deviations on Performance of Piezoresistive Pressure Sensors
Author
Singh, Jaskirat ; Rajanna, K. ; Reddy, A. Mallikarjuna ; Singh, Karam
Author_Institution
Semi-Conductor Lab., Ajitgarh, India
Volume
27
Issue
3
fYear
2014
fDate
Aug. 2014
Firstpage
410
Lastpage
416
Abstract
Diaphragm thickness and the corresponding piezoresistor locations change due to over or under etching in bulk micromachined piezoresistive pressure sensor which intern influences the device performance. In the present work, variation of sensitivity and nonlinearity of a micro electro mechanical system low pressure sensor is investigated. The sensor is modeled using finite element method to analyze the variation of sensitivity and nonlinearity with diaphragm thickness. To verify the simulated results, the sensors with different diaphragm thicknesses are fabricated. The models are verified by comparing the calculated results with experimental data. This study is potentially useful for the researchers as most of the times the diaphragm is either over-etched or under-etched due to inherent variation in wafer thickness and involving manual operations.
Keywords
diaphragms; etching; finite element analysis; micromachining; microsensors; piezoresistive devices; pressure sensors; resistors; bulk micromachined piezoresistive pressure sensor; diaphragm; finite element method; microelectromechanical system low pressure sensor; over-etching; piezoresistor; process deviation effect; under-etching; Etching; Piezoresistance; Resistors; Sensitivity; Sensors; Silicon; Stress; KOH etching; MEMS; microfabrication; pressure sensor;
fLanguage
English
Journal_Title
Semiconductor Manufacturing, IEEE Transactions on
Publisher
ieee
ISSN
0894-6507
Type
jour
DOI
10.1109/TSM.2014.2329569
Filename
6832638
Link To Document