DocumentCode :
50189
Title :
Effect of Process Deviations on Performance of Piezoresistive Pressure Sensors
Author :
Singh, Jaskirat ; Rajanna, K. ; Reddy, A. Mallikarjuna ; Singh, Karam
Author_Institution :
Semi-Conductor Lab., Ajitgarh, India
Volume :
27
Issue :
3
fYear :
2014
fDate :
Aug. 2014
Firstpage :
410
Lastpage :
416
Abstract :
Diaphragm thickness and the corresponding piezoresistor locations change due to over or under etching in bulk micromachined piezoresistive pressure sensor which intern influences the device performance. In the present work, variation of sensitivity and nonlinearity of a micro electro mechanical system low pressure sensor is investigated. The sensor is modeled using finite element method to analyze the variation of sensitivity and nonlinearity with diaphragm thickness. To verify the simulated results, the sensors with different diaphragm thicknesses are fabricated. The models are verified by comparing the calculated results with experimental data. This study is potentially useful for the researchers as most of the times the diaphragm is either over-etched or under-etched due to inherent variation in wafer thickness and involving manual operations.
Keywords :
diaphragms; etching; finite element analysis; micromachining; microsensors; piezoresistive devices; pressure sensors; resistors; bulk micromachined piezoresistive pressure sensor; diaphragm; finite element method; microelectromechanical system low pressure sensor; over-etching; piezoresistor; process deviation effect; under-etching; Etching; Piezoresistance; Resistors; Sensitivity; Sensors; Silicon; Stress; KOH etching; MEMS; microfabrication; pressure sensor;
fLanguage :
English
Journal_Title :
Semiconductor Manufacturing, IEEE Transactions on
Publisher :
ieee
ISSN :
0894-6507
Type :
jour
DOI :
10.1109/TSM.2014.2329569
Filename :
6832638
Link To Document :
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