Title :
A study of high current characteristics of devices in a 0.13µm CMOS technology
Author :
Tan, Pee-Ya ; Manna, Indrajit ; Tan, Yew-Chee ; Lo, Keng-Foo ; Li, Pian-Hong
Author_Institution :
Chartered Semiconductor Mfg. Ltd., 60 Woodlands Industrial Park D St 2, Singapore 738406
Abstract :
This paper evaluates the high current performance of several devices in 0.13µm CMOS process as function of layout parameters using transmission line pulse (TLP) technique. Devices characterized include GGNMOS, PMOS, STI bounded diodes, Polysilicon bounded diodes, N+ contact, Cu metal line and via.
Keywords :
CMOS process; CMOS technology; Circuit testing; Electric breakdown; Electrostatic discharge; Failure analysis; Fingers; Protection; Robustness; Semiconductor diodes;
Conference_Titel :
2002 Electrical Overstress/Electrostatic Discharge Symposium, 2002. EOS/ESD '02.
Conference_Location :
Charlotte, NC, USA
Print_ISBN :
978-1-5853-7040-5
Electronic_ISBN :
978-1-5853-7040-5
