Title :
ESD evaluation of the emerging MuGFET technology
Author :
Russ, Christian ; Gossner, Harald ; Schulz, Thomas ; Chaudhary, Nirmal ; Xiong, Weize ; Marshall, Andrew ; Duvvury, Charvaka ; Schruefer, Klaus ; Cleavelin, C. Rinn
Author_Institution :
Infineon Technol. AG, Munich, Germany
Abstract :
ESD characteristics of fully depleted (FD) FinFET devices are presented and compared to planar structures manufactured in the same multiple-gate FET (MuGFET) technology. FinFET-type MOS devices in breakdown mode are found to show an unprecedented sensitivity to ESD stress, while planar devices and FinFET gated diodes perform reasonably and with I-V characteristics beneficial for ESD protection.
Keywords :
MOSFET; electrostatic discharge; semiconductor device breakdown; ESD protection; MuGFET breakdown mode; fully depleted FinFETdevice; multiple-gate FET gated diodes; planar devices; CMOS technology; Charge carriers; Diodes; Electrostatic discharge; FETs; FinFETs; Isolation technology; MOS devices; Manufacturing; Silicon;
Conference_Titel :
Electrical Overstress/Electrostatic Discharge Symposium, 2005. EOS/ESD '05.
Conference_Location :
Tucson, AZ
Print_ISBN :
978-1-58537-069-6
Electronic_ISBN :
978-1-58537-069-6
