Title :
RF ESD protection strategies: Codesign vs. low-C protection
Author :
Soldner, W. ; Streibl, M. ; Hodel, U. ; Tiebout, M. ; Gossner, H. ; Schmitt-Landsiedel, D. ; Chun, J.H. ; Ito, C. ; Dutton, R.W.
Author_Institution :
Infineon Technol. AG, Munich, Germany
Abstract :
The present work is focussed on the trade off between conventional RF ESD protection concepts optimized in terms of capacitive load and the frequently discussed RF ESD codesign idea with ESD protection skilfully integrated into RF circuit design. A narrow and a broadband RF test circuit were developed to put the benchmark on a firm basis. RF and ESD experiments are discussed, showing where the higher effort for the codesign approach starts to pay off.
Keywords :
electrostatic discharge; integrated circuit design; integrated circuit testing; radiofrequency integrated circuits; RF ESD protection strategy; RF circuit design; broadband RF test circuit; capacitive load; low-c protection; radiofrequency ESD codesign; CMOS technology; Circuit synthesis; Circuit testing; Electrostatic discharge; Niobium; Parasitic capacitance; Production; Protection; Radio frequency; Robustness;
Conference_Titel :
Electrical Overstress/Electrostatic Discharge Symposium, 2005. EOS/ESD '05.
Conference_Location :
Tucson, AZ
Print_ISBN :
978-1-58537-069-6
Electronic_ISBN :
978-1-58537-069-6
