Title :
The effect of deep trench isolation, trench isolation and sub-collector doping on the electrostatic discharge (ESD) robustness of radio frequency (RF) ESD STI-bound P+/N-well diodes in BiCMOS silicon germanium technology
Author :
Voldman, Steven H.
Author_Institution :
IBM Microelectron., Essex Junction, VT, USA
Abstract :
This paper demonstrates the independent and combined effect of deep trench (DT) isolation, trench isolation (TI), and sub-collector on shallow trench isolation (STI) -bound p+/n-well ESD diode structures in a 120 and 200 GHz fT BiCMOS Silicon Germanium technology.
Keywords :
electrostatic discharge; isolation technology; semiconductor diodes; semiconductor doping; BiCMOS; ESD; P+/N-well diodes; deep trench isolation; electrostatic discharge; radio frequency; silicon germanium technology; subcollector doping; BiCMOS integrated circuits; Doping; Electrostatic discharge; Germanium silicon alloys; Isolation technology; Radio frequency; Robustness; Semiconductor diodes; Silicon germanium; Substrates;
Conference_Titel :
Electrical Overstress/Electrostatic Discharge Symposium, 2003. EOS/ESD '03.
Conference_Location :
Las Vegas, NV
Print_ISBN :
978-1-5853-7057-3
Electronic_ISBN :
978-1-5853-7057-3
