Title :
Fabrication & characterization of S-band power amplifier using GaAs die
Author :
Bhatti, Nadeem Shahzad ; Imran, Muhammad
Author_Institution :
Nat. Eng. & Sci. Comm., Islamabad, Pakistan
Abstract :
This paper presents the fabrication and characterization of S-band power amplifier MMIC (GaAs die) implemented in hybrid fixture, which is compatible with different microwave applications. The configuration used for device fabrication is relatively simple, low cost and easy to assemble with manual die & wedge bonder. It can be used in any microwave assembly as driver/power amplifier. Due to use of substrate material RO4003C, epoxy, and solder preform (SPF) and molytab it is useful for prototype production. The MMIC has gain as high as 21.37 dB at S-band. A number of Key methods are discussed for MMIC performance improvement.
Keywords :
III-V semiconductors; MMIC power amplifiers; driver circuits; gallium arsenide; soldering; MMIC performance; S-band power amplifier fabrication; driver amplifier; gain 21.37 dB; microwave applications; prototype production; solder preform; wedge bonder; Assembly; Bonding; Costs; Fabrication; Fixtures; Gallium arsenide; MMICs; Microwave amplifiers; Microwave devices; Power amplifiers;
Conference_Titel :
Microelectronics and Packaging Conference, 2009. EMPC 2009. European
Conference_Location :
Rimini
Print_ISBN :
978-1-4244-4722-0
Electronic_ISBN :
978-0-6152-9868-9
