DocumentCode
503267
Title
Three-phase grid inverter with SiC JFETs and Schottky diodes
Author
Rabkowski, Jacek ; Barlik, Roman
Author_Institution
Dept. of Electr. Eng., Warsaw Univ. of Technol., Warsaw, Poland
fYear
2009
fDate
25-27 June 2009
Firstpage
181
Lastpage
184
Abstract
This paper describes design, construction and tests of 2 kVA three-phase current source inverter with silicon carbide (SiC) JFETs and Schottky diodes. Low on-resistance and switching energies of SiC JFET lead to switching frequency increase to 100 kHz. In result size and weight of inverter is reduced. Operation of 2 kVA model is illustrated by laboratory results - measured efficiency at nominal conditions was 96,55%.
Keywords
Schottky diodes; invertors; junction gate field effect transistors; Schottky diodes; SiC JFET; current source inverter; silicon carbide; three-phase grid inverter; Circuit testing; Circuit topology; Driver circuits; Inverters; JFETs; Power electronics; Schottky diodes; Silicon carbide; Switching frequency; Voltage; JFET; Silicon carbide; current source inverter;
fLanguage
English
Publisher
ieee
Conference_Titel
Mixed Design of Integrated Circuits & Systems, 2009. MIXDES '09. MIXDES-16th International Conference
Conference_Location
Lodz
Print_ISBN
978-1-4244-4798-5
Electronic_ISBN
978-83-928756-1-1
Type
conf
Filename
5289652
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