• DocumentCode
    503443
  • Title

    Investigation of phase transition in germanium-silicate glasses formed as the result of oxidation of Ge-doped polycrystalline silicon

  • Author

    Kovalevsky, A.A. ; Strogova, A.S.

  • Author_Institution
    Belarusian state Univ. of Inf. & Radioelectron., Minsk, Belarus
  • fYear
    2009
  • fDate
    14-18 Sept. 2009
  • Firstpage
    617
  • Lastpage
    618
  • Abstract
    The process of formation and properties of Ge-silicate glasses (GSG) in the process of oxidation of the Ge-doped nanostructured polycrystalline silicon films (NSF PCS) has been investigated. The dependences of heating effects in the process of linear heating of grinded GSG are shown.
  • Keywords
    elemental semiconductors; germanate glasses; germanium; glass; glass transition; nanostructured materials; oxidation; semiconductor thin films; semimetallic thin films; silicon; vitrification; Ge-doped nanostructured polycrystalline silicon; GeO2-SiO2; Si:Ge; germanium-silicate glass formation; linear heating; phase transition; Conducting materials; Electromagnetic heating; Glass; IEEE catalog; Indium tin oxide; Informatics; Nanocrystals; Organizing; Oxidation; Silicon;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave & Telecommunication Technology, 2009. CriMiCo 2009. 19th International Crimean Conference
  • Conference_Location
    Sevastopol
  • Print_ISBN
    978-1-4244-4796-1
  • Type

    conf

  • Filename
    5292958
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=503443